New ultra-precision CMP technique applying direct air-back method and non-foaming plastic pad

摘要

For the realization of planarization polishing (CMP) technology of wafer surfaces in ULSI fabrication, a direct air back method and polishing pads with a spirally V-shaped groove formed over the non-foaming hard plastic were developed and used to study the uniform polishing characteristics of SiO/sub 2/ films (1 /spl mu/m thick) formed by CVD over 6" silicon wafers. The results showed excellent uniformity of planarization polishing with the remaining film thickness variation below 520/spl plusmn/10 nm, which is far superior to that of conventional techniques.