Thermal stress effects on capacitance and current characteristics of Cu/Si and Cu/TiN/Si Schottky-diodes

摘要

To get insight into thermally induced interface variations in Cu/p-Si and Cu/TiN/p-Si systems, Schottky diodes were fabricated by metal sputtering onto contact windows in SiO/sub 2/ after a thorough cleaning procedure. Patterning of the metal layer was done by wet etching (Cu) or RIE (TiN). For passivation a 50 nm SiO/sub 2/ layer was used. The electrical characteristics of these diodes were carefully investigated including frequency- and temperature dependent capacitance-voltage measurements (capacitance spectroscopy) and temperature dependent current measurements.