DIMENSION RELATED EFFECTS ON THE STRUCTURE PERFECTION IN Si/SiC MULTILAYER STRUCTURES

摘要

The development of modern electronics needs production of multiple semiconductor structures with a thick substrate and multiple thin layers on top. Recently, a great effort has been made on heterostructural growth between materials with very different lattice constants such as CVD growth of SiC and Si [1]. There is about 20% mismatch between the lattice constants of cubic SiC and Si that leads to stresses and strains inside the layers. These stresses and strains exert important influence on the physical and technical performance of the layers.