Development of self-alignment edge junction MIM matrix for LCD

摘要

The research and fabrication of self-alignment edge junction MIM matrix (256 $MUL 384) with Ta/TaMo double-layered bus line is described. The self-alignment edge junction MIM is realized by lift-off technology and exposed to light from the back side of the substrate. This novel technique and structure of MIM make it possible to obtain very small MIM junction in size (several $mu@m$+2$/ or smaller) without using strict fine pattern processing technology. The double- layered bus line technique not only decreases the resistivity of bus line (it is critical in the case of large area display), but also eliminate almost the possibility of the open line, one of the most major defects of MIM-LCD. At the same time, it makes the design of size and structure of MIM matrix flexible. The experimental results indicate that the current voltage characteristics of the edge junction MIM are similar considerably to the one of the planar junction. An experimental 256 $MUL 384 pixels LCD actively addressed by MIM matrix is manufactured and a contrast of more than 26:1 is presented.