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Silicon opto-FET coupled to waveguides for integrated optical microsystems

机译:硅光电FET连接到用于集成光学微系统的波导

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Integrated optics on silicon gives the opportunity to obtain microsystems for optical communications or sensor applications on one silicon chip. In all types of applications it is necessary to connect the waveguides to the photodetectors to transform the optical signal in an electrical signal. We have designed an opto-FET with a special structure that allow the optical coupling to a waveguide. A 3-D model was developed for the system: opto-FET-coupler-waveguide. The model takes into account two effects of the incident illumination: the variation of channel conductivity due to the carrier generation; the variation of channel depth due to the photovoltaic effect across the channel-gate junction. Also we studied the channel depth variation along the channel length (due to the potential variation) and along the channel width (due to the exponential decrease of optical power). The most important conclusion of the model is: in case of leaky-wave coupling of the opto-FET to a waveguide, the dependence of the photocurrent on optical power is practically linear, while in the case of uniform illumination it is logarithmic. The model was verified on a circuit integrated on silicon.
机译:硅的集成光学器件赋予机会在一个硅芯片上获得用于光通信或传感器应用的微系统。在所有类型的应用中,必须将波导连接到光电探测器以在电信号中转换光信号。我们设计了一种具有特殊结构的光FET,允许光学耦合到波导。为系统开发了一个三维型号:光FET-耦合器 - 波导。该模型考虑了入射照明的两个效果:由于载体产生导致的通道电导率的变化;由于频道栅极连接的光伏效果导致通道深度的变化。此外,我们还研究了沿沟道长度(由于电位变化)和沿沟道宽度的沟道深度变化(由于光功率的指数降低)。该模型的最重要的结论是:在光学激光器对波导的情况下,光电流对光功率的依赖性实际上是线性的,而在均匀照明的情况下它是对数的。该模型在硅上集成的电路上进行了验证。

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