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Method for fabricating a silicon semiconductor substrate having an integrated waveguide and an optical fiber coupled thereto

机译:具有集成波导和耦合至其的光纤的硅半导体衬底的制造方法

摘要

A method for fabricating a silicon semiconductor substrate having an optical fiber coupled to an integrated waveguide by anisotropically etching a V-shaped groove aligned with the integrated waveguide into the substrate. The integrated waveguide is provided with a freely accessible end surface situated opposite the end of the V-shaped groove. The freely accessible end surface is formed by first producing a recess in the silicon semiconductor substrate. The recess is made by anisotropically etching a piece of the substrate from the surface opposite the surface bearing said V-shaped groove. The piece is bared down to a region surrounding said integrated waveguide but the piece remains connected to the waveguide by a V-shaped notch. Then pressure is exerted on the piece, causing it to break off at the V-shaped notch, thus forming the freely accessible end surface of the waveguide as a fracture surface. An optical fiber is inserted into the V-shaped groove and extended up to the freely accessible end surface.
机译:一种通过将与集成波导对准的V形凹槽各向异性地蚀刻到衬底中来制造具有耦合到集成波导的光纤的硅半导体衬底的方法。集成波导具有与V形凹槽的端部相对的自由接近的端面。通过首先在硅半导体衬底中产生凹槽来形成可自由接近的端面。通过从与承载所述V形凹槽的表面相对的表面各向异性地蚀刻一块基板来形成凹部。该部件向下裸露到围绕所述集成波导的区域,但是该部件保持通过V形槽口连接到波导。然后,将压力施加在零件上,使其在V形缺口处破裂,从而将波导的可自由接近的端面形成为断裂面。光纤插入V形槽中,并延伸到可自由接近的端面。

著录项

  • 公开/公告号US5700382A

    专利类型

  • 公开/公告日1997-12-23

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号US19960591619

  • 发明设计人 ARMIN SPLETT;

    申请日1996-04-01

  • 分类号H01L21/00;B44C1/22;

  • 国家 US

  • 入库时间 2022-08-22 02:40:38

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