Si$-1-y$/C$-y$/ alloys with carbon composition of 0.5 at% were successfully grown on n-Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO$-2$/ capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of $beta@-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si$-1-y$/C$-y$/ alloys with high quality was recrystallized on Si substrate.
展开▼
