Deep finlike AlGaAs nanostructure fabricated by CAIBE

摘要

We show that very narrow fin-like periodic nanostructure with 0.1 micrometer width, 1 micrometer depth, and a few microns length can be fabricated on AlGaAs using Chemically-Assisted-Ion-Beam-Etching with oxidized AlGaAs as negative mask. This technique may have applications to nanoscale devices fabrication.