Operating characteristics of InGaAsP/GaAs SCH SQW high-power lasers by LPE

摘要

A detailed operating characteristics of InGaAsP/GaAs separate confinement heterostructure single-quantum-well wide-stripe lasers emitting at 808 nm grown by liquid phase epitaxy is reported. The temperature dependences of the lasing wavelength $lambda@, the threshold current density J$-th$/ and differential quantum efficiency $eta$-d$/ are studied. The effects of the cavity length L on the threshold current density J$-th$/ and the differential quantum efficiency $eta$-d$/ are studied. The threshold current density J$-th$/ increases with increasing temperature T. But the increase of J$-th$/ with temperature T is slightly deviated from the exponential dependence. The data fitting of J$-th$/ with between 10$DGR@C and 40$DGR@C demonstrates a record characteristic temperature T$-0$/ of 218 K, indicating a minor influence of temperature on J$-th$/.