Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs

摘要

A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced as-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the as-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the as antisite in electron-irradiated GaAs.