Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures

摘要

Comparisons have been made of the frequency dependence of the backgate admittance of GaAs structures prepared by MBE on undoped buffer layers prepared at high and low temperatures and of ion implanted structures. A model is offered to explain extra capacitive currents at low frequencies. Inductive and negative resistance behaviours which appear to be related have not been explained. None of these phenomena were apparent in the LT based structures.