Optical high frequency test structure and test bench definition for on wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode

摘要

A new Optical-High-Frequency test structure and dedicated test bench have been developed to characterize a Germanium-on-Silicon photodiode intended to be used as an integrated noise source, a first step to high frequency transistor noise figure on-wafer extraction. Continuous wave signals have been measured from these 1550 nm photodiodes, with RF power higher than −20 dBm at 109 GHz.