Optical and laser properties of epitaxially grown passively Q-switched Cr{sup}(4+):GGG/Nd{sup}(3+):GGG, Cr{sup}(4+):YAG/Yb{sup}(3+):YAG and Cr{sup}(4+):YAG/Nd{sup}(3+):YAG microchip lasers

摘要

We have used Liquid Phase Epitaxy technique to grow Cr{sup}(4+) doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Most of the work on passively Q-switched microchip lasers has been done with neodymium-doped crystals as gain medium and Cr{sup}(4+):YAG as saturable absorbers, however, bulk Cr{sup}(4+):GGG passive Q-switches grown by a Czochralski technique were also presented.