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Optical and laser properties of epitaxially grown passively Q-switched Cr/sup 4+/:GGG/ Nd/sup 3+/:GGG, Cr/sup 4+/:YAG/ Yb/sup 3+/:YAG and Cr/sup 4+/:YAG/ Nd/sup 3+/ :YAG microchip lasers

机译：外延生长的被动调Q Cr / sup 4 + / :: GGG / Nd / sup 3 + /：GGG，Cr / sup 4 + /：YAG / Yb / sup 3 + /：YAG和Cr / sup的光学和激光特性4 + /：YAG / Nd / sup 3 + /：YAG微芯片激光器

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Liquid phase epitaxy technique is used to grow Cr/sup 4+/ doped GGG and YAG monocrystalline thin films as a saturable absorber for passive Q-switching of Nd:GGG, Yb:YAG and Nd:YAG microchip lasers. Comparison of laser performance and influence of epitaxial film saturable absorber properties on microchip characteristics (repetition rate, pulse energy and pulse length) are reported.

机译：液相外延技术用于生长Cr / sup 4 + /掺杂的GGG和YAG单晶薄膜，作为可饱和吸收剂用于Nd：GGG，Yb：YAG和Nd：YAG微芯片激光器的被动Q转换。报告了激光性能的比较以及外延膜可饱和吸收剂性能对微芯片特性（重复率，脉冲能量和脉冲长度）的影响。

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《》|2003年|p.452|共1页
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Kopczynski; K.; Sarnecki; J.; Mierczyk; Z.; Skwarcz; J.; Kwasny; M.; Mlynczak; J.; Ubizski; S.B.; Syvorotka; I.M.; Melnyk; S.; Matkowski; A.;
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中图分类无线电电子学、电信技术;
关键词
Q-switching; microchip lasers; chromium; neodymium; ytterbium; optical films; optical saturable absorption; liquid phase epitaxial growth; passive Q-switching; Cr/sup 4+/:GGG microchip laser; Nd/sup 3+/:GGG microchip laser; Cr/sup 4+/:YAG microchip laser; Yb/sup 3+/:YAG microchip laser; Nd/sup 3+/ :YAG microchip laser; monocrystalline thin films; saturable absorber; repetition rate; pulse energy; pulse length; liquid phase epitaxy; GdGG:Cr/sup 4+/; GdGG:Nd/sup 3+/; YAG:Cr/sup 4+/; YAG:Yb/sup 3+/; YAG:Nd/sup 3+/; GdGa5O12:Cr; GdGa5O12:Nd; YAl5O12:Cr; YAl5O12:Yb; YAl5O12:Nd;

机译：调Q;微芯片激光器;铬;钕; y;光学膜;光学饱和吸收;液相外延生长;无源调Q; Cr / sup 4 + / :: GGG微芯片激光器; Nd / sup 3 + / :: GGG微芯片激光器; Cr / sup 4 + /：YAG微芯片激光器; Yb / sup 3 + /：YAG微芯片激光器; Nd / sup 3 + /：YAG微芯片激光器;单晶薄膜;饱和吸收体;重复率;脉冲能量;脉冲长度;液相外延; GdGG：Cr / sup 4 + /; GdGG：Nd / sup 3 + /; YAG：Cr / sup 4 + /; YAG：Yb / sup 3 + /; YAG：Nd / sup 3 + /; GdGa5O12：Cr; GdGa5O12：Nd; YAl5O12：Cr; YAl5O12：Yb; YAl5O12：Nd;

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专利

1. Thermal Focal Length Control in Passively Q-switched End Pulsed-Pumped Ceramics and Single Crystal Yb~(3+):YAG/ Cr~(4+):YAG Microchip Laser [J] . J. M. El-Azab, Y. S. Nada, S. M. Maize Nonlinear Optics, Quantum Optics . 2017,第2期

机译：热焦距控制在被动Q开关端脉冲泵浦陶瓷和单晶Yb〜（3 +）：YAG / Cr〜（4 +）：YAG Microchip激光器
2. Investigation of a passively Q-switched Raman laser at 1176 nm with Nd~(3+):YAG/Cr~(4+):YAG/YAG composite crystal and a coupled cavity [J] . Jiang Cong, Chen YinYao, Mei ShaoHong, Optical and quantum electronics . 2019,第12期

机译：Nd〜（3 +）：YAG / Cr〜（4 +）：YAG / YAG复合晶体和耦合腔在1176 nm被动调Q拉曼激光器的研究
3. Performance of diode-end-pumped Cr~(4+), Nd~(3+):YAG self-Q-switched and Nd:YAG/Cr~(4+):YAG diffusion bonded lasers [J] . Yehoshua Kalisky, Leonid Kravchik, Milan R. Kokta Optical Materials . 2004,第4期

机译：二极管泵浦Cr〜（4 +），Nd〜（3 +）：YAG自调Q和Nd：YAG / Cr〜（4 +）：YAG扩散粘结激光器的性能
4. Optical and laser properties of epitaxially grown passively Q-switched Cr{sup}(4+):GGG/Nd{sup}(3+):GGG, Cr{sup}(4+):YAG/Yb{sup}(3+):YAG and Cr{sup}(4+):YAG/Nd{sup}(3+):YAG microchip lasers [C] . K. Kopczynski, J. Sarnecki, Z. Mierczyk, European Quantum Electronics Conference . 2003

机译：外延生长的光纤和激光特性被动Q切换CR {sup}（4 +）：ggg / nd {sup}（3 +）：ggg，cr {sup}（4 +）：yag / yb {sup}（3 +）：YAG和CR {SUP}（4 +）：YAG / ND {SUP}（3 +）：YAG Microchip激光器
5. Development of a passively Q-switched Nd:YAG microchip laser for use in the Satellite Laser Ranging 2000 project. [D] . Gompers, Samuel Leo. 2000

机译：开发了用于卫星激光测距2000项目的被动调Q开关Nd：YAG微芯片激光器。
6. Ceramic planar waveguide laser of non-aqueous tape casting fabricated YAG/Yb:YAG/YAG [O] . Chao Wang, Wenxue Li, Chao Yang, -1

机译：YAG / Yb：YAG / YAG非水带铸造陶瓷平面波导激光器
7. Passive Q-switch laser operation of circular, buried depressed-cladding waveguides realized by direct fs-laser beam writing in Nd:YAG/Cr^4+:YAG composite media [O] . Gabriela Croitoru (Salamu), Florin Jipa, Nicolaie Pavel 2017

机译：被动Q开关激光操作的圆形，通过直接FS激光束写入Nd：YAG / Cr ^ 4 +：YAG复合介质实现了掩埋凹陷 - 包层的波导。

Optical and laser properties of epitaxially grown passively Q-switched Cr/sup 4+/:GGG/ Nd/sup 3+/:GGG, Cr/sup 4+/:YAG/ Yb/sup 3+/:YAG and Cr/sup 4+/:YAG/ Nd/sup 3+/ :YAG microchip lasers

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