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EFFECT OF MACHINING PARAMETERS ON SURFACE ROUGHNESS IN μ-EDM OF CONDUCTIVE SiC

机译:加工参数对导电SiCμ-EDM表面粗糙度的影响

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Micro-electrical discharge machining (μ-EDM) is a non-traditional manufacturing technique that has been widely used in the production of precision engineering components throughout the world in recent years. The most important performance measure in μ-EDM is the surface roughness. The Silicon Carbide is a reaction bonded advanced ceramic that is the fourth hardest material after Diamond, boron nitride and boron carbide. Due to low fracture toughness, machining of Silicon Carbide is accomplished with EDM. In this study, the experimental studies were conducted under varying gap voltage, capacitance and threshold. The numbers of experiments were reduced by L9 array of Taguchi's theory of DOE. Signal-to-noise (S/N) ratio was employed to determine the most influencing levels of parameters that affect the surface roughness in the μ-EDM of conductive silicon carbide. To validate the study, confirmation experiment has been carried out at optimum set of parameters and predicted results have been found to be in good agreement with experimental findings. A fuzzy logic model for predicting surface roughness during μEDM was also developed on MATLAB software and the goodness of fit of predicted values with experimental values was tested using chi-square test.
机译:微电路放电加工(μ-EDM)是一种非传统制造技术,近年来已广泛用于全球精密工程组件的生产。 μ-EDM中最重要的性能测量是表面粗糙度。碳化硅是反应键合的先进陶瓷,其是金刚石,氮化硼和碳化硼后的第四最硬的材料。由于低断裂韧性,用EDM完成碳化硅的加工。在该研究中,在不同的间隙电压,电容和阈值下进行实验研究。通过L9阵列的DOE阵列减少了实验的数量。采用信号 - 噪声(S / N)比率来确定影响导电碳化硅μ-EDM中表面粗糙度的最大影响的参数水平。为了验证研究,确认实验已经在最佳的参数集中进行,并发现预测结果与实验结果吻合良好。在Matlab软件上开发了一种用于预测表面粗糙度的模糊逻辑模型,并使用Chi-Square试验测试了预测值的拟合值的良好性。

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