This paper characterizes a piezoresistive sensor under variations of both size and orientation with respect to the silicon crystal lattice for its application to MEMS pressure sensing. The sensor to be studied is a four-terminal piezoresistive sensor commonly referred to as a van der Pauw (VDP) structure. In a recent study, our team has determined the relation between the biaxial stress state and the piezoresistive response of a VDP structure by combining the VDP resistance equations with the equations governing silicon piezoresistivity and has proposed a novel piezoresistive pressure sensor. It is observed that the sensitivity of the VDP sensor is over three times higher than the conventional filament type Wheatstone bridge resistor. With MEMS devices being used in applications which continually necessitate smaller size, characterizing the effect of relative size and misalignment on the sensitivity of the VDP sensor is important. It is determined that the performance of the sensor is strongly dependent only on the longitudinal position of the sensor on the diaphragm, and is relatively tolerant of other errors in the manufacturing process such as transverse position, sensor depth, and orientation angle.
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