Results of 2D numerical simulation of a four-terminal light emitting thyristor in the regime of incomplete turn-off are presented. This regime is characterized by the negative gate current, which is insufficient to turn the device off. A part of the middle p-n junction is reverse biased and blocks the current, whereas the remaining part of the structure is highly conducting and light-emitting. The size of the light-emitting area and the light intensity in this region can be controlled using small gate signals. Gates make it possible also to control the position of the light-emitting region. The utilization of incomplete turn-off principle can be used for light intensity modulation and switching purposes.
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