Self-consistent calculation of temperature profiles in proton-implanted top-surface-emitting diode lasers

摘要

elf-consistent thermal electrical model of proton- implanted top-surface-emitting lasers is applied to study thermal properties of GaAs/AlGaAs/AlAs devices with the active-region diameter of 35 $mu@m. The results show that intense heating occurs at pumping currents exceeding 4 times threshold. Minimization of electrical series resistance is shown to be very important for improving the device performance. However, due to p-side up mounting, calculated thermal resistance remains relatively large even when electrical series resistance is very small.