Atomic-layer epitaxy of device-quality Al0.3Ga0.7As

摘要

We report on the recent growth by Atomic Layer Epitaxy (ALE) of device quality Al$-0.3$/Ga$-0.7$/As in a modified commercial reactor. A standard Emcore reactor was altered by the installation of baffles to prevent mixing of the reactant gas streams and a computer controlled servo motor to allow for a nonlinear rotation cycle. By varying the V/III ratio and the exposure time to the reactant gases it is possible to control the background carbon doping from high resistivity to p $EQ 1 $MUL 10$+20$/ cm$+$MIN@3$/, without the need for an additional p-type source. Since low background doping was also achieved, silane was used to obtain n-type Al$-0.3$/Ga$-0.7$/As as high as n $EQ 1 $MUL 10$+18$/ cm$+$MIN@3$/. The room temperature Hall mobility of the n-type Al$-0.3$/Ga$-0.7$/As films varied from 1200 to 3700 cm$+2$//V$DOT@sec. Photoluminescence and preliminary doping results are presented and discussed.