首页> 外文OA文献 >Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy

【2h】

Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy

机译：通过金属有机气相外延生长的al0.3Ga0.7as缓冲层改善亚微米栅极Gaas mEsFET的性能

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Hiruma K.; Mori M.; Yanakura E.; Mizuta Hiroshi; Takahashi S.;
展开▼
作者单位

展开▼
年度 1989
总页数
原文格式 PDF
正文语种 {"code":"en","name":"English","id":9}
中图分类

相似文献

外文文献
中文文献
专利

1. Improved performance of submicrometer-gate GaAs MESFETs with an Al/sub 0.3/Ga/sub 0.7/As buffer layer grown by metal organic vapor phase epitaxy [J] . Hiruma K., Mori M. IEEE Transactions on Electron Devices . 1989,第2期

机译：通过金属有机气相外延生长具有Al / sub 0.3 / Ga / sub 0.7 / As缓冲层的亚微米级栅GaAs MESFET的性能得到改善
2. Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers [J] . Yasushi TAKANO, Masayoshi UMEZAWA, Sho SHIRAKATA, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第7B期

机译：利用InGaAs梯度缓冲层的低温生长实现GaAs衬底上InAs层的金属有机气相外延
3. Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy [J] . Kevin L Schulte, TobyJ. Garrod, Tae Wan Kim, Journal of Crystal Growth . 2013,第maya1期

机译：氢化物气相外延生长的厚变质缓冲层上量子阱结构的金属有机气相生长
4. Influence of growth rate on the dopant confinement in delta-doped GaAs epitaxial layers grown by low-pressure metal organic vapor phase epitaxy [C] . G.Li, Australian National Univ., Canberra, . 1993

机译：生长速率对低压金属有机气相外延生长的δ掺杂GaAs外延层中掺杂限制的影响
5. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications. [D] . Shintri, Shashidhar S. 2012

机译：纳米图案化硅上金属有机气相外延生长的（211）B碲化镉缓冲层的生长和表征，用于基于碲化汞的红外探测器。
6. Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy [O] . Inah Yeo, Doukyun Kim, Kyu-Tae Lee, 2020

机译：通过液滴外延生长的无应变GaAs / Al0.3ga0.7as量子点的对比化学物理分析
7. Hexagonal GaN grown on GaAs{11n} substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers [O] . Funato M, Yamamoto S, Kaisei K, 2001

机译：使用AlAs中间层通过金属有机气相外延在GaAs {11n}衬底上生长的六方GaN

Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy

著录项

引文网络

相似文献

相关主题

期刊订阅