Carbon is a very suitable acceptor in III -V compounds for device applications requiring thin layers with very low resistivity due to its low diffusion coefficient. We have used a modified, atmospheric pressure MOCVD reactor to grow carbon doped GaAs films by atomic layer epitaxy (ALE) using trimethylgallium (TMGa) as the carbon source. The hole density was controllable from high resistivity to 10$+20$/ cm$+$MIN@3$/. These results were then used as the basis for the study of carbon doping of InGaAs in a layer-by-layer technique using TMGa, triethylindium (TEIn) and arsine (AsH$-3$/).
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机译：碳是III -V化合物中的非常合适的受体，用于装置应用，该装置需要具有极低电阻率的薄层由于其低扩散系数而具有非常低的电阻率。我们使用了通过作为碳源的三甲基镓（TMGA）来通过原子层外延（ALE）来生长掺杂的大气压MOCVD反应器以使碳掺杂的GaAs膜作为碳源。孔密度可控于高电阻率至10 $ + 20 $ / cm $ + $ min @ $ /。然后将这些结果作为使用TMGA，三乙基indium（TEIN）和胂（Ash $ -3 $）在层逐层技术中研究InGaAs碳掺杂的基础。
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