Fast and simple checking methods of the doping concentration in semiconductors

摘要

Four different possibilities are proposed for the fast checking of doping and impurity concentration in semiconductors. The proposition is based on the characteristic experimental concentration dependence of the breakdown voltage, the slope of the reverse I-V characteristics, the ac conductivity, and the capacitance at zero bias, obtained in planar and mesa Au/Cr/n-GaAs Schottky contacts.