Generation of nonequilibrium optical phonons in GaAs/AlAs quantum wells by intrasubband and intersubband scatterings

摘要

The generation of a nonequilibrium population of optical phonons by photoexcited hot electrons in semiconductor quantum wells is investigated theoretically. The microscopic model of electron- phonon interaction proposed by Huang and Zhu has been used to compute the distributions of confined longitudinal optical phonons and interface modes in GaAs/AlAs quantum wells as a function of well width. Experimental tests of the calculated distributions by Raman scattering are discussed.