A new method for getting GaAs FET large signal impedance parameters from its small signal S-parameters and direct current measurement (output characteristic) is presented in this paper. A piecewise harmonic balance technique is discussed in detail as well as its convergence. A C-band GaAs FET high power amplifier which may be used as a driver power amplifier in a transmitting set of a small satellite communication station is analyzed and is designed by means of this new method. The computing programs are completed. The results of analysis and experiments of the high power amplifier are given at the end of the paper.
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