Engineering Silicon-On-Insulator (SOI) Substrates for Hybrid Orientation Technologies (HOT)

摘要

There are many published efforts to increase carrier mobility in the conduction channel in order to enhance MOSFET performance. For example, combining nMOSFET on a (100) oriented Si surface and pMOSFET on a (110) Si surface presents a wide range of advantages, but this approach suffers from the lack of suitable hybrid orientation SOI substrates.