A feasibility study of SiC on oxide by wafer bonding and layer transferring

摘要

SiC is an attractive material for applications requiring high operation conditions of temperature, speed, power and radiation. For these purposes, SiC has several materials properties superior to Si: wider band-gap, higher breakdown field, higher saturated electron drift velocity and higher thermal conductivity. However, the cost of bulk SiC crystals is extremely high and the size of the wafer is presently still limited to 2 inch in diameter. The purpose of this work is to study the feasibility of using wafer bonding approach to transfer SiC layers grown by CVD on silicon to insulating substrates, such as oxidized silicon or sapphire. Since the quality of CVD SiC layers on silicon has been improved significantly, the transfer technology could possibly drastically reduce the cost and provide a great flexibility to explore the potential offered by SiC in many application areas: high frequency and/or rad-hard electronic devices, visible optical wave guides and planar displays.