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Palladium Nanoparticles Modified N-type Epitaxial Silicon Electrode for Photocurrent Detection of Ascorbic Acid

机译:用于光电流检测的钯纳米颗粒改性N型外延硅电极的抗坏血酸

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In this work, about 100 nm palladium layer was coated on the front surface of n-type epitaxial silicon wafer by vacuum evaporating and etched electrochemically in 0.1 M HF-HCl solution to form palladium nanoparticle modifying n-silicon electrode. Scanning electron microscope (SEM) and x-ray photoelectron spectroscopy (XPS) were used to characterize the morphology and composition of the modified electrode surface. The modified electrode has been used to constitute a novel photo-electrochemical sensor for the detection of ascorbic acid (AA) with a two-electrode cell in absence of reference electrode by photocurrent measurement at a zero bias. The photocurrent determination of AA shows two linear dynamic responses over the concentration range of 2 μM-42 μM and 82μM-642 uM with a detection limit of 2.0×10~(-6) M. Furthermore, this sensor demonstrated good stability, repeatability and selectivity remarkably.
机译:在这项工作中,通过真空蒸发在0.1M HF-HCl溶液中的真空蒸发并蚀刻在n型外延硅晶片的前表面上涂覆约100nm的钯层,以形成钯纳米粒子改性N-硅电极。扫描电子显微镜(SEM)和X射线光电子能谱(XPS)用于表征改性电极表面的形态和组成。改性电极已用于构成新颖的光电化学传感器,用于检测在不存在参比电极的情况下用双电极电池的抗坏血酸(AA)通过零偏压的光电流测量来检测。 AA的光电流测定显示出在2μm-42μm和82μm-642Mum的浓度范围内的两个线性动态响应,检测限为2.0×10〜(-6)M.此外,该传感器显示出良好的稳定性,可重复性和选择性值得注意。

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