The effects of inclusion of fluorine in the CdCl_2 treatment on n-In_xSe_y/n-CdS/n-CdTe multi-layer solar cells

摘要

We have established the growth of thin films of indium selenide (In_xSe_y), cadmium sulfide (CdS), and cadmium telluride (CdTe) on fluorine-doped tin oxide (FTO) substrates from aqueous and acidic solutions, using electroplating in 2-electrode configuration. These layers were incorporated in a multilayer device structure, glass/FTO/n-In_xSe_y/n-CdS/n-CdTe/Au using n-In_xSe_y as a buffer layer. The highest achieved device parameters to date are J_(sc)=37.6 mAcm~(-2), V_(oc)=0.640 V, FF=0.41 and η=10% under AM 1.5 illumination conditions at room temperature. The efficiency was obtained with devices heat treated in the presence of CdCl_2+CdF_2. Results showing the effects of surface treatments using CdCl_2 (CC) and CdCl_2+CdF_2 (CCF) with other device parameters will be presented and discussed in this paper.