Study of Crystallographic Properties and Elemental Migration in two-stage prepared Cu(In, AI)Se_2

摘要

CulnAl metallic precursor films were selenised at different temperatures and the migration of the elements investigated. GD-OES was used to determine the elemental depth profiles, and XRD analysis gave an insight into the phase transformations taking place. These combined techniques made it possible to study the diffusion and reaction processes taking place during the selenisation stage. Post selenisation annealing was also investigated, which led to partial incorporation of the Al into the CulnSe_2 lattice.