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Synthesis of Nanocrystalline Carbide Ceramics Via Reduction of Anion-Loaded Activated Carbon Precursors

机译:通过减少阴离子加载的活性炭前体来合成纳米晶体碳化物陶瓷

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Commercial ceramic carbide operations require large thermal and mechanical energy inputs in order to produce a powder product. A process that could reduce the energy requirements needed to make these materials would allow for these materials to be implemented in a greater number of industrial applications. In this study, silicon carbide (SiC), tungsten carbide (WC), and molybdenum carbide (Mo_2C) were synthesized via the carbothermal reduction of activated carbon loaded with silicate, tungstate, and molybdate anions adsorbed from aqueous solutions. Carburization was carried out under reducing and inert gas atmospheres, at temperatures lower than those utilized by commercial operations. Silicon carbide "whiskers" were synthesized under H_2 at 1400°C, while molybdenum carbide and mixed crystals of WC, W_2C, and W were synthesized at temperatures below 1000°C. X-ray diffraction and scanning electron microscopy were used to characterize the carburization products, and inductively coupled plasma-optical emission spectroscopy (ICP-OES) was used to determine the degree of adsorption onto the activated carbon matrix.
机译:商业陶瓷碳化物操作需要大的热和机械能量输入,以产生粉末产品。可以降低使这些材料所需的能量要求的过程将允许这些材料在更多的工业应用中实现。在这项研究中,碳化硅(SiC),碳化钨(WC),及碳化钼(Mo_2C)通过碳热还原装载有硅酸盐,钨酸盐,以及从水溶液中吸附阴离子的钼酸活性炭合成。在减少和惰性气体环境下进行渗碳,在低于商业运营利用的温度下进行。在1400℃下在H_2下合成碳化硅“晶须”,而WC,W_2C和W的碳化钼和混合晶体在低于1000℃的温度下合成。 X射线衍射和扫描电子显微镜用于表征渗碳产品,并且使用电感耦合等离子体 - 光发射光谱(ICP-OES)将吸附程度确定在活性炭基质上。

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