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Structure and Morphology Study of Very Thin TiCrN Films Deposited by Unbalanced Magnetron Co-sputtering

机译:不平衡磁控杂交沉积的非常薄的TiCrn薄膜的结构和形态学研究

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Very thin titanium chromium nitride (TiCrN) films with various Ti content were deposited by unbalanced magnetron co-sputtering of Ti and Cr metals. Deposition time was set to 15 min to achieve film thickness ranging from 142 to 190 nm. Silicon wafers and copper grids were used as substrates. The Ti current (I_(ti)) was varied from 0.4 to 1.0 A to achieve the differnt Ti content whereas Cr current (I_(Cr)) was fixed to 0.6 A. Effects of the Ti content on structure and morphology of these TiCrN thin films were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD revealed that the films showed crystalline structure with fcc phase and were formed as Ti_xCr_(1-x)N solid solution with a crystallite size of about 13 nm. The TEM result confirmed that the films were polycrystalline. The AFM images of the films showed dome top characteristic with root-mean-square roughness slightly decreasing from 1.643 to 1.273 nm. FE-SEM cross-sectional images exhibited development of film morphology from columnar structure corresponding to zone 1 of Thornton's structure zone model to fine structure gradually with the increase of the Ti content.
机译:通过Ti和Cr金属的不平衡磁控凝固沉积具有各种Ti含量的非常薄的氮化钛(TiCrN)膜。沉积时间设定为15分钟以实现从142到190nm的薄膜厚度。硅晶片和铜网用作基材。 Ti电流(I_(TI))从0.4到1.0A变化,以实现不同的TI含量,而CR电流(I_(CR))固定为0.6A。TI含量对这些TICRN薄的结构和形态的影响通过X射线衍射(XRD),透射电子显微镜(TEM),原子力显微镜(AFM),场发射扫描电子显微镜(FE-SEM)和能量分散X射线光谱(EDS)研究薄膜。 XRD显示,薄膜显示出具有FCC相的结晶结构,并形成为Ti_xcr_(1-x)n固溶体,其微晶尺寸为约13nm。 TEM结果证实了薄膜是多晶的。薄膜的AFM图像显示圆顶顶部特征,具有从1.643到1.273nm略微降低的根均方粗糙度。 FE-SEM横截面图像从逐渐与TI含量的增加逐渐与桑顿结构区模型的柱状结构相对应的柱状结构的发展。

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