Characteristics of CdS and photo-transistor as photo sensor on the sensor unit (SU-6804) and OP amp unit (OU-6801)

摘要

Has succeeded in conducting a Routine practicum with the theme of the characteristics of Photo-transistor and CdS as Photo sensor on the Photo Sensor Unit (SU-6804) and OP Amp Unit (OU-6801) in the Sensor and Transducer Laboratory of the Department of Physics, FMIPA IPB University. The installed specifications of the Photo Sensor Unit (SU-6804) include: Photo Bias Level: DC 0～30mA, AC Bias Frequency: 100Hz～10kHz (with Digital Counter), photo Sensing Range: 0～200mm variable distance, photo Coupling Speed: 0～1000 pulse / sec, sensor devices: LED, Photo- transistor, CdS, and input Voltage: DC± 15V, 1A. The OP Amp Unit aids the installed specifications of the photosensor unit (SU-6804) (OU-6801). Measurement of light using CdS and Photo-transistor as photosensor with measurement distance ranges from 5 mm to 55 mm with a stage of 5 mm and 6 replications. The measurement results show that the farther the measurement distance of the light from the light source, the lower the electrical voltage. Based on the analyzed graphs and table, Photo-transistor is the most accurate to be used as a photosensor.