Effects of Ionizing Radiation on the Physical and Functional Parameters of VDMOS and PMOS Components

摘要

Investigations of radiation effects on MOS components can be divided in two directions. The one direction comprises the production of components with the highest possible radiation resistance, while the other direction leads towards the production of MOS components sensitive to ionizing radiation in order to produce sensors and dosimeters of ionizing radiation. The development of MOS integrated circuits shows a tendency of increasing the complexity and constantly decreasing their dimensions which can disturb components reliability. In that course, this paper examines the physical and functional parameters of VDMOS and PMOS components in radiation environment. The response of VDMOS and PMOS components was experimentally determined in respect to absorbed radiation dose with the charge density, threshold voltage shift and the oxide film thickness as parameters. Experiments were performed in the Co-60 gamma radiation field while keeping well controlled laboratory conditions.