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Temperature and strain effects on core bandgap and diameter of bare CdSe core and CdSe/ZnS heterostructure core/shell quantum dots

机译:温度和应变对核心带隙的影响和裸CDSE核心和CDSE / ZnS异质结构核心/壳量子点的效应

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We investigated the effect of temperature dependent interface strain on the bandgap and diameter of spherical bare CdSe core and CdSe/ZnS heterostructure core/shell quantum dots (QDs) that are synthesized by colloidal technique and characterized by UV-Vis absorption spectroscopic technique. The measured band gap is used in strain dependent two band effective mass approximation to determine the core diameter of bare CdSe core and CdSe/ZnS core/shell QDs. It is found that lattice vibration dominates the shift in bandgap of CdSe core QD. On the other hand, mismatch strain due to difference between thermal expansion coefficients and lattice constants of core and shell regions dominates the core band gap shift in CdSe/ZnS QDs, causing about 0.15-0.30 eV increase in band gap (0.35-45 nm decrease in diameter) relative to unstrained value in CdSe/ZnS QD at any temperature.
机译:我们调查了温度依赖性界面应变对球形裸CdSe核心和CdSe / ZnS异质结构核心/壳量子点(QDS)的影响,该胶凝和Cdse / ZnS异质结构核心点(QDS),其由胶体技术合成,并通过UV-Vis吸收光谱技术表征。测量的带隙用于应变依赖性两个带有效质量近似,以确定裸CDSE核心和CDSE / ZnS核心/壳QD的核心直径。结果发现,格子振动主导了CDSE核心QD的带隙的转变。另一方面,由于核心和壳区域的热膨胀系数和晶格常数之间的差异导致的不匹配应变在CDSE / ZnS QD中偏移核心带隙移位,导致带隙的大约0.15-0.30eV(0.35-45nm降低直径)在任何温度下相对于CDSE / ZnS QD中的未训练值。

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