首页> 外文会议>International Symposium on Power Semiconductor Devices and IC s >Formulation of single event burnout failure rate for high voltage devices in satellite electrical power system
【24h】

Formulation of single event burnout failure rate for high voltage devices in satellite electrical power system

机译:卫星电力系统中高压装置的单事件烧坏故障率的制定

获取原文

摘要

Single-Event Burnout (SEB) is a catastrophic failure in the high voltage devices that is initiated by the passage of particles during turn-off state. Previous papers reported that SEB failure rate increases sharply when applied voltage exceeds a certain threshold voltage. On the other hand, the high voltage devices for the artificial satellite have been increasing. In space, due to increase flux of particle, it is predicted that SEB failure rate will be higher. In this paper, we proposed the failure rate calculation method for high voltage devices based on SEB cross section and flux of particles. This formula can calculate the failure rate at space level and terrestrial level depending on the applied voltage of the high voltage devices.
机译:单事件烧坏(SEB)是高压装置中的灾难性故障,该灾难性地由颗粒在关闭状态期间发起。之前的论文报道说,当施加电压超过某个阈值电压时SEB故障率急剧增加。另一方面,人造卫星的高压装置一直在增加。在太空中,由于粒子的增加,因此预测SEB失效率将更高。本文提出了基于SEB横截面的高压装置故障率计算方法及颗粒的通量。根据高压装置的施加电压,该公式可以计算空间水平和地面水平的故障率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号