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Radiation-Resisted Er-doped Fiber Fabricated by MCVD Vapor Phase Deposition

机译:MCVD气相沉积制备抗辐射掺铒光纤

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In this paper, we reported radiation-resisted Er-doped fibers (EDF) fabricated by MCVD vaper phase deposition. Vapor phase deposition (VPD) is utilized to insure the precise control of the refractive index profile as well as homogeneous doping. Ce is doped with Er in vapor phase in the quartz tube and collapsed to colorless preforms, which are drew to polymer-coated fibers. These fibers exhibit absorption coefficient of-23 dB/m at 980 nm. After 100 krad of radiation, the induced loss is estimated to be less than 1 dB/m. Er-doped photonic crystal fiber (PCF) is also reported here which shows low radiation induced accentuation (RIA).
机译:本文报道了用MCVD气相沉积法制备的抗辐射掺铒光纤。气相沉积(VPD)用于确保折射率分布的精确控制以及均匀掺杂。Ce在石英管中以气相掺铒,并折叠成无色的预制体,这些预制体被拉到聚合物涂层的纤维上。这些纤维在980 nm处的吸收系数为-23 dB/m。经过100克拉的辐射后,感应损耗估计小于1 dB/m。本文还报道了掺铒光子晶体光纤(PCF),其辐射感应强度(RIA)较低。

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