Fabricating dielectric membrane comprising e.g. silicon, useful e.g. in microelectronics, comprises vapor phase deposition of the film implementing organosilicon precursor and/or mixture comprising e.g. organic compound

摘要

Process of fabricating a dielectric membrane comprising silicon, carbon and hydrogen, permeable to at least one chemical etching agent and in the form of a film, comprises: vapor phase deposition of the film implementing at least one organosilicon precursor carrying at least one aromatic group and/or at least a mixture comprising an organosilicon precursor not carrying an aromatic group and an organic compound comprising an aromatic group, where the conditions of the deposition step is fixed so that the aromatic groups remain in the resulting film. An independent claim is included for a process for producing an air cavity in a structure of the type comprising the degradation of a sacrificial material by diffusion of a chemical etching agent through a membrane, comprising: implementing the process for fabricating a membrane on a structure comprising at least one cavity filled with a sacrificial material, and the cavity is thus covered by the film obtained from the step; contacting of the structure with the chemical agent, and chemical agent traversing the membrane and degrading the sacrificial material; and eliminating the chemical etching agent, through which the air cavity is obtained.