New precursor mixture for formation of specific low dielectric porous film on substrate comprises film matrix precursor, and either keto compound or e.g. 1-methyl-4-(1-methylethyl)-7-oxabicyclo(2.2.1)heptane as pore-forming compound

摘要

A precursor mixture comprising at least a film matrix precursor compound having silicon, carbon, oxygen and hydrogen atoms, and either at least a keto compound as pore-forming compound or at least one of the following pore-forming compounds: 1-methyl-4-(1-methylethyl)-7-oxabicyclo[2.2.1]heptane (II), 1,3,3-trimethyl-2-oxabicyclo[2.2.1]octane or 1,8-cineole (or eucalyptol) (III) or 1-methyl-4-(1-methyl ethenyl)-7-oxabicyclo[4.1.0]heptane or limonene epoxide (IV) is new. A precursor mixture comprising at least a film matrix precursor compound having silicon, carbon, oxygen and hydrogen atoms, and either keto compound of formula H-C(O)-R (I) as pore-forming compound or at least one of the following pore-forming compounds: 1-methyl-4-(1-methylethyl)-7-oxabicyclo[2.2.1]heptane (II), 1,3,3-trimethyl-2-oxabicyclo[2.2.1]octane or 1,8-cineole (or eucalyptol) (III) or 1-methyl-4-(1-methyl ethenyl)-7-oxabicyclo[4.1.0]heptane or limonene Epoxide (IV) is new. R : linear or branched, optionally saturated hydrocarbon radical, or cyclic optionally saturated hydrocarbon radical (optionally substituted by linear or branched 1-4C alkyl, linear or branched 1-4C alkanoyl or linear or branched 1-4C alkanoyl oxy). An An independent claim is included for formation (M1) of a low dielectric k porous film on a substrate involving: reacting at least a film matrix precursor compound having silicon, carbon, oxygen and hydrogen atoms, and either at least a pore-forming compound (I)-(IV).