Efficient simulation method for quantum build-up and decay processes in resonant tunneling

摘要

We propose an efficient simulation method for the quantum build-up and decay processes in a potential well when a Gaussian wave packet is resonantly incident on a double barrier structure. Unlike the conventional method, our method does not use a numerical integration over electron's position x. Moreover, a numerical integration over electron's wave number k, which is also present in the conventional method, becomes unnecessary when the barrier width is large. Our approach would be utilized in a simulation software for quantum devices such as resonant tunneling diode.