Research on physics-of-failure model for electro-migration damage accumulation under multi-level stress profile based on accelerated factor

摘要

The problem which is paid attention in this paper is that existing physics-of-failure model cannot input and calculate complex multi-level stress environmental profile when making simulating calculation of microelectronic devices' using reliability. A physical model for electro-migration failure is analyzed as an example. We make cumulative calculation and improvement using theory of accelerated factor, and the general function of physics-of-failure model for electro-migration damage accumulation under multi-level stress profile is set up. This model can achieve simulation and prediction of cycle time before failure under multi-level stress profile. At the end of this paper, an instance of multi-level stress profile's calculation is provided.