MOCVD growth and thermal analysis of Sb_2Te_3 thin films and nanowires

摘要

Sb_2Te_3 is a chalcogenide compound of great interest, due to its applications in the fields of phase change, thermoelectric devices, as well as of topological insulators. In this work, the MOCVD deposition of both Sb_2Te_3 thin films and nanowires was performed by using the same set of precursors and exploiting the low temperature deposition for thin films and VLS mechanisms for nanowires. A special attention was dedicated to the analysis of the thermal properties, performed by scanning thermal microscopy and modulated photothermal radiometry techniques. The thermal conductivity of the thin layers was compared to that of a nanowire, finding that the values are comparable to those reported for bulk Sb_2Te_3.