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AFM characterization of PS prepared in different concentration of hydrofluoric acid

机译:AFM表征PS以不同浓度的氢氟酸制备的PS

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The effect of HF concentration on the surface structure of porous silicon (PS) was carefully investigated by the AFM characterization. The results showed that no pores were present on PS surface which was prepared under the higher concentration of HF (10%). However, the pores were gradually visible with the HF concentration reduction. The main pores diameter was about 100 nm, when the concentration is 5.71%. The data of surface roughness and the main height distribution of the "hill" both showed an increase with the reduction of concentration, from 6.39 nm increase to 16.9 nm and from 30 nm increase to 90 nm, respectively, which implied that the pores were better exposed under the lower HF concentration.
机译:通过AFM表征仔细研究HF浓度对多孔硅(PS)表面结构的影响。结果表明,在PS表面上没有孔隙在高浓度的HF(10%)下制备。然而,孔随着HF浓度还原而逐渐可见。当浓度为5.71%时,主孔径为约100nm。 “山坡”的表面粗糙度和主高度分布的数据随着浓度的降低而增加,从6.39nm增加到16.9nm,分别从30nm增加到90nm,这意味着孔更好暴露在较低的HF浓度下。

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