首页> 外文会议>China International Nanoscience and Technology Symposium >Preparation and Study of 0.7(Mg_(0.8)Zn_(0.2))TiO_3·0.3{Ba_4Nd_(28/3)Ti_(18)O_(54)·zBi_2O_3} Microwave Dielectric Ceramics
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Preparation and Study of 0.7(Mg_(0.8)Zn_(0.2))TiO_3·0.3{Ba_4Nd_(28/3)Ti_(18)O_(54)·zBi_2O_3} Microwave Dielectric Ceramics

机译:制备和研究0.7(Mg_(0.8)Zn_(0.2))TiO_3·0.3 {Ba_4ND_(28/3)Ti_(18)O_(54)·ZBI_2O_3}微波介质陶瓷

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The (Mg_(0.8)Zn_(0.2))TiO_3(MZT) as the foundation is mainly studied to join high dielectric material Ba_4Nd_(28/3)Ti_(18)O_(54)·zBi_2O_3(BNT) to preparation microwave dielectric ceramic 0.7(Mg_(0.8)Zn_(0.2))TiO_3·0.3{Ba_4Nd_(28/3)Ti_(18)O_(54)·zBi_2O_3}(z=0.15, 0.18, 0.2) to improve dielectric properties of MZT. While Bi~(3+) could reduce the sintering temperature to make MZT and BNT composite in a lower sintering temperature (1200~1230°C). According to the results of the dielectric properties, density, XRD and SEM tests of the obtained ceramics, we can find out that the amount of doped Bi~(3+) and the sintering temperature affected the structure and properties of the ceramics. The results show that when z=0.18, 0.7(Mg_(0.8)Zn_(0.2))TiO_3·0.3{Ba_4Nd_(28/3)Ti_(18)O_(54)·zBi_2O_3} sintering at 1230°C can get good dielectric properties: ε_r =35.56, Q_f =5811GHz, τ_t =-3.225 ppm/°C.
机译:作为基础的(Mg_(0.8)Zn_(0.2))TiO_3(MZT)主要研究加入高介电材料Ba_4nd_(28/3)Ti_(18)O_(54)·Zbi_2O_3(BNT),以制备微波介质陶瓷0.7(Mg_(0.8)Zn_(0.2))TiO_3·0.3 {Ba_4ND_(28/3)Ti_(18)O_(54)·ZBI_2O_3}(Z = 0.15,0.18,0.2),以改善MZT的介电性能。虽然Bi〜(3+)可以减少烧结温度,使MZT和BNT复合材料在较低的烧结温度(1200〜1230℃)中。根据所得陶瓷的介电性能,密度,XRD和SEM试验的结果,我们可以发现掺杂的Bi〜(3+)和烧结温度影响陶瓷的结构和性质。结果表明,当Z = 0.18,0.7(mg_(0.8)zn_(0.2))tio_3·0.3 {ba_4nd_(28/3)ti_(18)o_(54)·zbi_2o_3}在1230°C时烧结可以获得良好的电介质属性:Ε_R= 35.56,Q_F = 5811GHz,τ_t= -3.225 ppm /°C。

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