Characterization of Stoichiometric ZrO_2 Thin Film on Si by Angle- Resolved X-ray Photoelectron Spectroscopy

摘要

Simultaneous thermal oxidation and nitridation technique was utilized to transform sputtered Zr to stoichiometric ZrO_2 Thin films on Si substrate. The stoichiometry of this type of oxide has high dielectric constant value of ~25 may be applied as dielectric in metal-oxide-semiconductor-based power devices. Through nitrous oxide gas environment, the oxidation/nitridation process was performed at 700°C for a set of time of 5-20 min. Chemical properties of the fabricated films have been characterized by angle-resolved x-ray photoelectron spectrometer. From the characterization, it was found that stoichiometric Zr-O (ZrO_2) was formed. Nitrogen content in the samples was investigated. It was identified that sample oxidized/nitrided for 15 min gives the highest atomic percentage of nitrogen of 2.64 at% in the interfacial layer. This nitrogen content in the near interface region may help to passivate the Si dangling bonds, which may thus enhance the interface quality of oxide-semiconductor.