Two CVD diamond film detectors with different film quality were made and their properties aiming at pulsed radiation detection were tested and discussed. It has been found that the properties of CVD diamond film detectors are affected seriously by diamond qualities. Impurities, defects, and crystal boundaries which cause traps in diamond increase the dark current, and make charge collection efficiency lower and time response slower. The time response and radiation hardness of CVD diamond film detectors are much better than that of Si-PIN detectors. All the result shows that a diamond film detector with high quality diamond is a much better alternative of Si-PIN detector in pulsed radiation detection.
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