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The method of determining the duration of transients in semiconductor devices for current-voltage characteristics measurement

机译：确定用于电流电压特性测量的半导体器件瞬变持续时间的方法

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摘要

The improved method of automatic determining the duration of oscillating transients in semiconductor devices for correct current-voltage characteristics measurement is proposed. This method allows increasing the accuracy of current-voltage characteristics measurement. It is applied in measuring device for current-voltage characteristics analysis.

机译：提出了一种改进的自动确定半导体器件中振荡瞬变持续时间的方法，用于正确电流电压特性测量。该方法允许增加电流电压特性测量的精度。它应用于用于电流电压特性分析的测量装置。

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《IEEE International Scientific Conference on Electronics and Nanotechnology 》|2013年||共3页
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作者
Iermolenko Ievgen O.; Bondarenko Oleksandr F.; Iermolenko Kristina I.;
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正文语种
中图分类工程材料学 ;
关键词
current-voltage characteristic; measurement; semiconductor device; transient;

机译：电流电压特性;测量;半导体器件;瞬态;

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专利

1. Extraction of the materials parameters that determine the mobility in disordered organic semiconductors from the current-voltage characteristics: Accuracy and limitations [J] . R. J. de Vries, A. Badinski, R. A. J. Janssen, Journal of Applied Physics . 2013 ,第11期

机译：从电流-电压特性中提取确定无序有机半导体迁移率的材料参数：精度和局限性
2. Current-voltage characteristics of metai-oxide-semiconductor devices containing Ge or Si nanocrystais in thin gate oxides [J] . V. Beyer, J. von Borany, M. Klimenkov, Journal of Applied Physics . 2009 ,第6期

机译：薄栅氧化物中含Ge或Si纳米晶的半氧化物半导体器件的电流-电压特性
3. Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics [J] . Dhar S., Balakrishman V.R. IEEE Transactions on Electron Devices . 2000 ,第2期

机译：从电流-电压特性确定亚微米器件中栅金属与半导体之间的界面态的能级分布
4. The method of determining the duration of transients in semiconductor devices for current-voltage characteristics measurement [C] . Iermolenko Ievgen O., Bondarenko Oleksandr F., Iermolenko Kristina I. 2013 IEEE 33rd International Scientific Conference on Electronics and Nanotechnology . 2013

机译：确定用于电流-电压特性测量的半导体器件中瞬变持续时间的方法
5. Modeling the current-voltage (I-V) characteristics of the MOSFET device with quantum mechanical effects due to thin oxide near silicon/silicon dioxide interface using asymptotic methods. [D] . Abebe, Henok. 2002

机译：使用渐近方法，利用靠近硅/二氧化硅界面的薄氧化物，利用量子力学效应对MOSFET器件的电流-电压（I-V）特性进行建模。
6. Synthesis Methods Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing [O] . Randy L. Vander Wal, Gordon M. Berger, Michael J. Kulis, 2009

机译：用于气体传感的纳米级金属氧化物半导体的合成方法显微表征和器件集成
7. Extraction of the materials parameters that determine the mobility in disordered organic semiconductors from the current-voltage characteristics : accuracy and limitations [O] . Vries, de, RJ Rein, Badinski, A, Janssen, RAJ René, 2013

机译：从电流-电压特性中提取确定无序有机半导体中迁移率的材料参数：准确性和局限性

The method of determining the duration of transients in semiconductor devices for current-voltage characteristics measurement

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