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Theoretical Studies Of Positron States And Annihilation Characteristics At The Oxidized Cu(100) Surface

机译:氧化Cu(100)表面上正电子状态和湮灭特性的理论研究

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In this work we present the results of theoretical studies of positron surface and bulk states and annihilation probabilities of surface-trapped positrons with relevant core electrons at the oxidized Cu(100) surface under conditions of high oxygen coverage. An ab-initio study of the electronic properties of the Cu(100) missing row reconstructed surface at various on surface and sub-surface oxygen coverages has been performed on the basis of the density functional theory (DFT) using the Dmol3 code and the generalized gradient approximation (GGA). Surface structures in calculations have been constructed by adding oxygen atoms to various surface hollow and sub-surface octahedral sites of the 0.5 monolayer (ML) missing row reconstructed phase of the Cu(100) surface with oxygen coverages ranging from 0.5 to 1.5 ML. The charge redistribution at the surface and variations in atomic structure and chemical composition of the topmost layers associated with oxidation and surface reconstruction have been found to affect the spatial extent and localization of the positron surface state wave function and annihilation probabilities of surface trapped positrons with relevant core electrons. Theoretical results are compared with experimental data obtained from studies of oxidation of the Cu(100) surface using positron annihilation induced Auger electron spectroscopy (PAES). It has been shown that positron annihilation probabilities with Cu 3s and 3p core electrons decrease when total (on-surface and sub-surface) oxygen coverage of the Cu(100) surface increases up to 1 ML. The calculations show that for high oxygen coverage when total oxygen coverage is 1. 5 ML the positron is not bound to the surface.
机译:在这项工作中,我们提出正电子表面的理论研究和散装状态和高氧覆盖条件下,在氧化铜(100)面相关的芯的电子表面俘获的正电子湮没概率的结果。在Cu的电子性质的从头计算研究(100)缺少行各种上表面和亚表面氧覆盖率重建表面已使用Dmol3代码和广义的密度泛函理论(DFT)的基础上执行梯度近似(GGA)。在计算表面结构已通过添加氧原子与0.5单层(ML)缺少行的各种表面中空和子表面八面体位置构建重构的铜相(100)面与氧覆盖率范围为0.5至1.5 ML。在表面处和在原子结构,并用氧化和表面重建相关联的所述最上面的层的化学组成的变化的电荷再分配已经发现影响与相关表面俘获的正电子的正电子表面态波函数和湮灭概率的空间范围和定位核心电子。理论结果与从铜的氧化的研究中获得的实验数据进行比较(100),使用表面正电子湮没的感应俄歇电子能谱(PAES)。已经显示,与铜3S和3P芯电子正电子湮灭概率时总(上表面和次表面)的铜的氧覆盖(100)面增加至1 ML降低。计算结果表明,对于高的氧覆盖时总氧覆盖率为1.5 ML正电子没有结合到该表面。

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