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Novel approach in selective area chemical etching of copper metallization for electrical failure analysis

机译:电气故障分析铜金属化学蚀刻中的新方法

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The paper outlines a chemically developed method for selective area partial metal removal of copper metallization for electrical failure analysis (FA) purposes, such as micro-probing and fault isolation of power integrated circuit(IC) devices. Analysis procedures, evaluation and discussion are presented as reference.
机译:本文概述了用于电气故障分析(FA)目的的铜金属化的选择性区域部分金属去除的化学开发方法,例如功率集成电路(IC)器件的微探测和故障隔离。分析程序,评估和讨论作为参考。

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