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Analysis of satellite defects formed in photolithograph process by TOF-SIMS and XPS

机译:TOF-SIMS和XPS在光刻过程中形成的卫星缺陷分析

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Satellite defects are found on wafer surface after development of photo-resist in photolithograph process. We present advanced TOF-SIMS and XPS analysis together with the process investigation to reveal the formation mechanism of the defects.
机译:在光刻过程中光致抗蚀剂后,晶片表面在晶片表面上发现了卫星缺陷。我们将高级TOF-SIMS和XPS分析与过程调查一起展示了揭示缺陷的形成机制。

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