首页> 外文会议>2013 20th IEEE International Symposium on the Physical amp; Failure Analysis of Integrated Circuits >Analysis of satellite defects formed in photolithograph process by TOF-SIMS and XPS
【24h】

Analysis of satellite defects formed in photolithograph process by TOF-SIMS and XPS

机译:用TOF-SIMS和XPS分析光刻过程中形成的卫星缺陷

获取原文
获取原文并翻译 | 示例

摘要

Satellite defects are found on wafer surface after development of photo-resist in photolithograph process. We present advanced TOF-SIMS and XPS analysis together with the process investigation to reveal the formation mechanism of the defects.
机译:在光刻工艺中显影光刻胶后,在晶圆表面发现了卫星缺陷。我们提出了先进的TOF-SIMS和XPS分析以及工艺研究,以揭示缺陷的形成机理。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号